&GLOBAL
  PRINT_LEVEL LOW
  PROJECT C
&END GLOBAL

&FORCE_EVAL
  METHOD Quickstep
  &DFT
    BASIS_SET_FILE_NAME BASIS_SET
    POTENTIAL_FILE_NAME POTENTIAL
    &MGRID
      CUTOFF 240
      NGRIDS 1
      REL_CUTOFF 30
    &END MGRID
    &PRINT
      &MO
        EIGENVALUES
        OCCUPATION_NUMBERS
      &END MO
    &END PRINT
    &QS
      EPS_GVG 1.0E-8
      EPS_RHO 1.0E-10
    &END QS
    &SCF
      ADDED_MOS 4
      EPS_SCF 1.0E-5
      IGNORE_CONVERGENCE_FAILURE
      MAX_SCF 30
      SCF_GUESS ATOMIC
      &SMEAR ON
        METHOD energy_window
        WINDOW_SIZE 0.02
      &END SMEAR
    &END SCF
    &XC
      &XC_FUNCTIONAL Pade
      &END XC_FUNCTIONAL
    &END XC
  &END DFT
  &PRINT
    &GRID_INFORMATION ON
    &END GRID_INFORMATION
  &END PRINT
  &SUBSYS
    &CELL
      ABC 12.0 12.0 12.0
    &END CELL
    &COORD
      C   0.000000  0.000000  0.000000
    &END COORD
    &KIND C
      BASIS_SET DZVP-GTH-PADE
      POTENTIAL GTH-PADE-q4
    &END KIND
  &END SUBSYS
&END FORCE_EVAL
